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RFD12N06RLESM
Electrical Specifications
T C = 25 o C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
BV DSS
I DSS
I GSS
I D = 250 μ A, V GS = 0V (Figure 12)
I D = 250 μ A, V GS = 0V , T C = -40 o C (Figure 12)
V DS = 55V, V GS = 0V
V DS = 50V, V GS = 0V, T C = 150 o C
V GS = ± 16V
60
55
-
-
-
-
-
-
-
-
-
-
1
250
± 100
V
V
μ A
μ A
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
V GS(TH)
r DS(ON)
V GS = V DS , I D = 250 μ A (Figure 11)
I D = 18A, V GS = 10V (Figures 9, 10)
I D = 8A, V GS = 5V (Figure 9)
I D = 8A, V GS = 4.5V (Figure 9)
1
-
-
-
-
0.052
0.060
0.064
3
0.063
0.071
0.075
V
?
?
?
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
Thermal Resistance Junction to
R θ JC
R θ JA
TO-252AA
-
-
-
-
3.06
100
o C/W
o C/W
Ambient
SWITCHING SPECIFICATIONS (V GS = 4.5V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
t ON
t d(ON)
t r
t d(OFF)
t f
t OFF
V DD = 30V, I D = 8A
V GS = 4.5V, R GS = 22 ?
(Figures 15, 21, 22)
-
-
-
-
-
-
-
13
89
22
37
-
153
-
-
-
-
89
ns
ns
ns
ns
ns
ns
SWITCHING SPECIFICATIONS (V GS = 10V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
t ON
t d(ON)
t r
t d(OFF)
t f
t OFF
V DD = 30V, I D = 18A
V GS = 10V,
R GS = 24 ?
(Figures 16, 21, 22)
-
-
-
-
-
-
-
5.3
34
41
50
-
59
-
-
-
-
136
ns
ns
ns
ns
ns
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Q g(TOT)
Q g(5)
Q g(TH)
Q gs
Q gd
V GS = 0V to 10V
V GS = 0V to 5V
V GS = 0V to 1V
V DD = 30V,
I D = 8A,
I g(REF) = 1.0mA
(Figures 14, 19, 20)
-
-
-
-
-
12
6.8
0.54
1.7
3
15
8.2
0.65
-
-
nC
nC
nC
nC
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C ISS
C OSS
C RSS
V DS = 25V, V GS = 0V,
f = 1MHz
(Figure 13)
-
-
-
485
130
28
-
-
-
pF
pF
pF
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
SYMBOL
V SD
t rr
Q RR
TEST CONDITIONS
I SD = 8A
I SD = 4A
I SD = 8A, dI SD /dt = 100A/ μ s
I SD = 8A, dI SD /dt = 100A/ μ s
MIN
-
-
-
-
TYP
-
-
-
-
MAX
1.25
1.0
70
165
UNITS
V
V
ns
nC
?2002 Fairchild Semiconductor Corporation
RFD12N06RLESM Rev. C0
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